№ files_lp_3_process_7_085855
Technical process guideline describing the sequence and parameters for pretreatment, spin coating, UV exposure, post-exposure bake, development, and inspection of AZ nLOF 2020 photoresist on 4” silicon, silicon dioxide, and borofloat substrates using specified cleanroom equipment.
Batch name: Process template
Objective: Guideline for spin coating, exposure, and development of AZ nLOF 2020
Resist: AZ nLOF 2020
Substrate size: 4” substrates
Substrate materials: Si, SiO2, Borofloat
Process type: UV lithography
Equipment: Gamma UV Spin Coater, KS Aligner, MA6 – 2 Mask Aligner, Automatic Developer (TMAH UV-lithography), Optical Microscope
Pretreatment options: BHF dip (30 s, H2O 5 min) or HMDS treatment
Spin parameters: 30 s @ 3300 rpm (2 µm)
Softbake: 60 s @ 110 °C
Exposure mode: Soft contact
Exposure dose: 112 mJ/cm2
Post Exposure Bake: 60 s @ 110 °C (120 s recommended for Borofloat)
Developer: TMAH (AZ 726 MIF)
Development time: 30 s or 60 s (single puddle)
Inspection method: Optical microscopy
Application context: Cleanroom lithography process for microfabrication
Price: 8 / 10 USD
The file will be delivered to the email address provided at checkout within 12 hours.

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