№ lp_2_3_07482
Research paper describing development and characterization of 140 nm and 90 nm GaN MMIC devices for millimeter-wave power applications, including fabrication details, test results, and plans for open foundry release.
Authors: David F. Brown, Carlton Creamer, Kenneth K. Chu, Richard Isaak, Louis Mt. Pleasant, Donald Mitchell, Wen Zhu, Puneet Srivastava, Hong Lu, Jose Diaz
Organization: BAE Systems Inc
Location: Nashua, NH, USA
Keywords: GaN, MMIC, RF, millimeter wave, foundry
Document type: Technical paper
Target audience: DoD community, RF engineers
Focus: 140 nm GaN MMIC for DC–50 GHz, 90 nm GaN MMIC for V- and W-band
Device features: 140 nm gate length, low-stress SiN passivation, CPW layout
Test methods: DC, small-signal, pulsed IV, load-pull, X-band amplifier evaluation
Wafer sizes: 4-inch (future 6-inch scale)
Technology readiness: MRL 6 (planned)
Price: 8 / 10 USD
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