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This document contains supplementary experimental data and analysis related to neuromorphic photovoltaics, focusing on MoS2 and WS2 materials and their photoresponse characteristics under various treatments.
Year: 2026
Region / City: Shanghai, Hefei, Philadelphia, Nanjing, Beijing
Topic: Neuromorphic photovoltaics, Materials science
Document Type: Research paper, Supplementary information
Organization / Institution: Shanghai Institute of Technical Physics, University of Pennsylvania, HFIPS, Fudan University, Nanjing University, University of Chinese Academy of Sciences
Authors: Tangxin Li, Jinshui Miao, Xiao Fu, Bo Song, Bin Cai, Xiaohao Zhou, Peng Zhou, Xinran Wang, Deep Jariwala, Weida Hu
Target Audience: Researchers, academics in materials science, electrical engineering, and photonics
Period of Validity: N/A
Approval Date: N/A
Date of Changes: N/A
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Automated Reconfigurable Mission Adaptive Digital Assembly Systems (ARMADAS): Robotically Assembled Sustainable Lunar Infrastructure
Year: 2023
Region / city: Moffett Field, CA
Theme: Space exploration, Autonomous robotics
Document type: Research paper
Agency / institution: NASA Ames Research Center
Author: C. E. Gregg, K. C. Cheung
Target audience: Researchers, space exploration professionals
Effective date: N/A
Date of approval: N/A
Date of revisions: N/A
Supplementary Information: Organic Neuromorphic Spiking Circuit for Retina-Inspired Sensory Coding and Neurotransmitter-Mediated Neural Pathways
Document Type: Supplementary Information
Related Study Title: Organic neuromorphic spiking circuit for retina-inspired sensory coding and neurotransmitter-mediated neural pathways
Authors: Giovanni Maria Matrone; Eveline R.W. van Doremaele; Sophie Griggs; Gang Ye; Iain McCulloch; Francesca Santoro; Yoeri van de Burgt
Institutions: Eindhoven University of Technology; University of Oxford; Shenzhen University; King Abdullah University of Science and Technology (KAUST); Istituto Italiano di Tecnologia; RWTH Aachen; Forschungszentrum Juelich
Sections: Supplementary Discussion 1: Spiking circuit; Supplementary Discussion 2: Sensory coding with pressure sensor
Materials: P-3O OECT; PEDOT:PSS OECT; p(C4-T2-C0-EG) OECT
Components: Capacitor; Resistor (330 kOhm); Inverter pairs; Force sensor (Grove-Round Force Sensor, FSR402)
Voltage Range Examined: 0.3–0.6 V
Frequency Range Observed: 0.14–0.35 Hz
Figures Included: Supplementary Figures 1–11
Tables Included: Table 1; Table 2
Experimental Focus: Voltage-dependent spiking behavior and pressure-induced sensory coding
Topics: non-volatile Reconfigurable Neuromorphic