№ files_lp_4_process_2_40777
Supplementary scientific material presenting experimental conductivity, plasma frequency, and relaxation time values for Nb, Mo, Ta, and W within research on the low-frequency conductivity of low wear high-entropy alloys.
Year: Not specified
Field of Study: Materials Science and Engineering
Research Topic: Low-frequency electrical conductivity of refractory elements and high-entropy alloys
Document Type: Supplementary information to a scientific research publication
Institutions: National Cheng Kung University; National Taiwan Normal University; The University of Tennessee
Research Centers / Programs: Applied High Entropy Technology (AHET) Center; Heterogeneously-integrated Silicon Photonic Integration Center (HiSiPIC); Program on Semiconductor Packaging and Testing, Academy of Innovative Semiconductor and Sustainable Manufacture
Authors: Cheng-Hsien Yeh; Wen-Dung Hsu; Bernard Haochih Liu; Chan-Shan Yang; Chen-Yun Kuan; Yuan-Chun Chang; Kai-Sheng Huang; Song-Syun Jhang; Chia-Yen Lu; Peter K. Liaw; Chuan-Feng Shih
Corresponding Authors: Chuan-Feng Shih; Wen-Dung Hsu; Bernard Haochih Liu; Chan-Shan Yang
Affiliated Departments: Department of Electrical Engineering; Department of Materials Science and Engineering; Institute and Undergraduate Program of Electro-Optical Engineering
Countries / Regions: Taiwan; United States
Experimental Parameters: Electrical conductivity; plasma frequency; relaxation time
Materials Examined: Nb; Mo; Ta; W
Measurement Condition: Experimental conductivity values at 20 °C
Price: 8 / 10 USD
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