№ files_lp_4_process_2_61777
A journal article presenting the design and electrical simulation of a 100 nm n-MOSFET, including analysis of its mesh structure, transfer and output characteristics, and doping and carrier concentration plots.
Year: 2022
Publication Type: Journal
Volume: 12
Issue: 1
Publisher: IOSR
Authors: Muhibul Haque Bhuyan, Md. Tariqul Islam
Contact Email: [email protected]
Journal: IOSR Journal of VLSI and Signal Processing (IOSR-JVSP)
DOI: 10.9790/4200-12010715
ISSN: e-2319-4200, p-2319-4197
Pages: 7-15
Impact Factor: 2.82
Research Topic: n-MOSFET design and electrical characterization
Simulation Tools: SILVACO ATLAS, ATHENA, TONYPLOT
Device Technology: 100 nm CMOS
Price: 8 / 10 USD
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