№ lp_2_1_02490
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Plasma-enhanced atomic layer deposition process for Aluminum-scandium nitride (Al(1-x)ScxN) thin films, demonstrating ferroelectric switching and its application in non-volatile memory and piezoelectric MEMS.
Year: 2023
Region / City: USA
Topic: Ferroelectric materials, Thin films
Document type: Research article
Organization / Institution: The Kurt J. Lesker Company, Pennsylvania State University, Massachusetts Institute of Technology, Army Research Laboratory
Author: Gilbert B. Rayner, Jr., Noel O’Toole, Nathaniel Nelson, Bangzhi Liu, Jeffrey Shallenberger, Gregory Muha, Piush Behera, Suraj Cheema, Blaine Johs, Nastazia Moshirfatemi, Daniel Drury, Brendan M. Hanrahan, Nicholas A. Strnad
Target audience: Researchers, Engineers, Academics
Period of applicability: N/A
Approval date: N/A
Date of changes: N/A
Price: 8 / 10 USD
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Turn of the decade: versatility of 2D hexagonal boron nitride
Note: Year
Author: Albert F. Rigosi, Antonio L. Levy, Michael R. Snure, Nicholas R. Glavin
Keywords: hexagonal boron nitride, van der Waals materials, transport, optics
Topics: Aluminum-Scandium Ultrahigh Nitride