№ files_lp_3_process_9_69541
Scientific research article examining the influence of stoichiometry in amorphous molybdenum oxide thin films on resistive switching performance and synaptic plasticity characteristics in nonvolatile memristive devices for neuromorphic computing applications.
Authors: Gion Kalemai; Konstantinos Aidinis; Michael-Alexandros Kourtis; Dimitris Davazoglou; Anastasia Soultati
Affiliations: Institute of Nanoscience and Nanotechnology (INN), National Center for Scientific Research Demokritos, Greece; University of Patras, Greece; Ajman University, United Arab Emirates; Institute of Informatics & Telecommunications, NCSR Demokritos, Greece
Country: Greece; United Arab Emirates
Field: Materials Science; Nanotechnology; Electronic Engineering; Neuromorphic Computing
Keywords: molybdenum oxide; MoO3; H-MoO3-x; memristor; resistive switching; stoichiometry; oxygen vacancies; synaptic plasticity; neuromorphic systems
Type of document: Scientific research article
Material system: Amorphous fully-stoichiometric MoO3 and hydrogenated sub-stoichiometric H-MoO3-x thin films
Methodology: Hot-wire chemical vapor deposition; electrical characterization of memristive devices
Device structure: Vertical two-terminal memristor
Performance metrics: Endurance 250 cycles; ON/OFF ratio ~10^3; retention ~3·10^4 s
Scope: Investigation of the influence of stoichiometry on resistive switching and artificial synaptic behavior
Price: 8 / 10 USD
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